Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• minimal He+ ion damage effects compared with the earlier Ga+ systems, and reduced proximity effect, are the reasons for the renewed interest in ion beam lithography in the form of scanning helium ion beam lithography or “SHIBL”. The ultimate resolution is determined by a combination of ion beam diameter

Ion beam profiling from the interaction with a freestanding 2D layer

• Ivan Shorubalko,
• Kyoungjun Choi,
• Michael Stiefel and
• Hyung Gyu Park

Beilstein J. Nanotechnol. 2017, 8, 682–687, doi:10.3762/bjnano.8.73

• source. Our method of profiling ion beams with 2D-layer perforation provides more information on ion beam profiles than the conventional sharp-edge scan method does. Keywords: exposure dose; focused ion beam; freestanding 2D layer; graphene; ion beam diameter; ion beam point spread function

• interaction with 2D materials contains information about beam profiles [14][17][18]. Here we show that it is possible to fabricate pores in graphene membranes smaller than the ion beam diameter by carefully tailoring the exposure dose. The pore diameters directly depend on the time for which individual pixels